The Dissolution Behavior of the Void Defects by Hydrogen Annealing in Czochralski Grown Silicon Crystals

The Dissolution Behavior of the Void Defects by Hydrogen Annealing in Czochralski Grown Silicon Crystals

著者名:

掲載資料名:

Proceedings of the Third International Symposium on Defects in Silicon

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

99-1

発行年:

1999

開始ページ:

468

終了ページ:

478

総ページ数:

11

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772235 [1566772230]

言語:

英語

請求記号:

E23400/99-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013931
シリーズID:	PA00000028
会議名:	International Symposium on Defects in Silicon ; Meeting of the Electrochemical Society
回次:	3rd ; 195th
会議開催地:	Seattle, WA, USA
会議開催年:	1999.05.02-1999.05.07

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1 国際会議録 Formation Behaviour of Grown-in Defects in Silicon During Czochralski Crystal Growth Saishoji, T., Nakamura, K., Nakajima, H., Yokoyama, T., Ishikawa, F., Tomioka, J. Electrochemical Society	7 国際会議録 SIMULATION OF THE POINT DEFECT DIFFUSIONAND GROWTH CONDITION FOR DEFECT FREE CZ SILICON CRYSTAL Nakamura, K., Saishoji, T., Tomioka, J. Electrochemical Society
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