Photoexcitation Induced Suppression of Point Defect Formation during Ion Implantation in Silicon

Photoexcitation Induced Suppression of Point Defect Formation during Ion Implantation in Silicon

著者名:

掲載資料名:

Proceedings of the Third International Symposium on Defects in Silicon

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

99-1

発行年:

1999

開始ページ:

172

終了ページ:

180

総ページ数:

9

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772235 [1566772230]

言語:

英語

請求記号:

E23400/99-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013931
シリーズID:	PA00000028
会議名:	International Symposium on Defects in Silicon ; Meeting of the Electrochemical Society
回次:	3rd ; 195th
会議開催地:	Seattle, WA, USA
会議開催年:	1999.05.02-1999.05.07

類似資料:

1 国際会議録 In Situ Photoexcitation-Induced Suppression of Point Defect Generation in Ion Implanted Silicon Cho, C. R., Yarykin, N., Rozgonyi, G. A., Zuhr, R. A. MRS - Materials Research Society	7 国際会議録 THIN Ni SILICIDE FORMATION BY LOW TEMPERATURE-INDUCED METAL ATOM REACTION WITH ION IMPLANTED AMORPHOUS SILICON Erokhin, Yu.N., Patnaik, B.K., Pramanick, S., Hong, F., White, C.W., Rozgonyi, G.A. Materials Research Society
2 国際会議録 In Situ Deep Level Transient Spectroscopy of Defect Evolution in Silicon Following Ion Implantation at 80 K Cho, C. R., Brown, R. A., Kononchuk, O., Yarykin, N., Rozgonyi, G., Zuhr, R. MRS - Materials Research Society	8 国際会議録 Thermally Induced Dislocation and Slip Defects in Silicon Cho, C.R., Kim, Y.S., Lee, J.K., Ko, S.W., Choi, D.J., Son, C.B., Stephens, A.E., Rozgonyi, G.A. Electrochemical Society
3 国際会議録 Multilayer Defect Structure Formed Under High Energy Ion Implantation in Si Uspenskaya, L., Cho, C.R., Yarykin, N., Rozgonyi, G.A. Electrochemical Society	9 国際会議録 INVITED: CONTROL OF POINT DEFECTS, IMPURITIES, AND EXTENDED DEFECTS IN CZ Si: THE ORIGINAL/ONGOING SILICON NANOSCALE ENGINEERING DEFECT SCIENCE Rozgonyi, G.A. Electrochemical Society
4 国際会議録 SUPPRESSION OF SELF-INTERSTITIALS IN SILICON DURING ION IMPLANTATION VIA IN-SITU PHOTOEXCITATION Ravi, J., Erokhin, Yu., Christensen, K., Rozgonyi, G. A., Patnaik, B. K., White, C. W. MRS - Materials Research Society	10 国際会議録 INVITED: CONTROL OF POINT DEFECTS, IMPURITIES, AND EXTENDED DEFECTS IN CZ Si: THE ORIGINAL/ONGOING SILICON NANOSCALE ENGINEERING DEFECT SCIENCE Rozgonyi, G.A. Electrochemical Society
5 国際会議録 Charge-State Defect Engineering of Silicon During Ion Implantation Brown, R. A., Ravi, J., Erokhin, Y., Rozgonyi, G. A., White, C. W. MRS - Materials Research Society	11 国際会議録 Dislocation nucleation, growth and suppression during CW laser annealing of silicon Rozgonyi, G.A., Baumgart, H., Phillipp, F. North Holland
6 国際会議録 Charge State Defect Engineering of Silicon During Ion Implantation Brown, R. A., Ravi, J., Erokhin, Y., Rozgonyi, G. A., White, C. W. MRS - Materials Research Society	12 国際会議録 POINT DEFECT INJECTION AND ENHANCED Sb DIFFUSION IN Si DURING Co-Si AND Ti-Si REACTIONS Honeycutt, J.W., Rozgonyi, G.A. Materials Research Society

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