*Pizoelectric effects in AlGaN/GaN-based heterostructure field effect transistors

*Pizoelectric effects in AlGaN/GaN-based heterostructure field effect transistors

著者名:

掲載資料名:

Proceedings of the third Symposium on III-V Nitride Materials and Processes

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

98-18

発行年:

1998

開始ページ:

154

終了ページ:

168

総ページ数:

15

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772129 [1566772125]

言語:

英語

請求記号:

E23400/98-18

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013921
シリーズID:	PA00000028
会議名:	Symposium on III-V Nitride Materials and Processes
回次:	3rd
会議開催地:	Boston, MA, USA
会議開催年:	1998.11.01-1998.11.06

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