Blank Cover Image

Distributed Bragg reflectors based on AlN/GaN multilayers

著者名:
掲載資料名:
Proceedings of the third Symposium on III-V Nitride Materials and Processes
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
98-18
発行年:
1998
開始ページ:
129
終了ページ:
136
総ページ数:
8
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772129 [1566772125]
言語:
英語
請求記号:
E23400/98-18
資料種別:
国際会議録

類似資料:

1 国際会議録 Near Bandgap Photoluminescence Broadening in n-GaN Films

Iliopoulos, E., Doppalapudi, D., Ng, H. M., Moustakas, T. D.

MRS - Materials Research Society
7 国際会議録 High reflectance III-nitride bragg reflectors grown by molecular beam epitaxy

Ng, H. M., Moustakas, T. D.

MRS-Materials Research Society
2 国際会議録 GaN photodiodes grown by MBE on HVPE and ELO-HVPE GaN/sapphire substrates

Sampath,A.V., Iliopoulos,E., Seth,K., Fedyunin,Y., Misra,M., Ng,H.M., Lamarre,P., Feit,Z., Moustakas,T.D.

SPIE - The International Society for Optical Engineering
8 国際会議録 Effect of Nitridation and Buffer in GaN Films Grown on A-Plane (11-20) Sapphire

Doppalapudi, D., Iliopoulos, E., Basu, S. N., Moustakas, T. D.

MRS - Materials Research Society
3 国際会議録 Threading defect reduction in laterally overgrown GaN films by Hydride Vapor Phase Epitaxy

Doppalapudi, D., Nam, K.J., Sampath, A., Singh, Raj, Ng. H.M., Basu, S.N., Moustakas, T.D.

Electrochemical Society
9 国際会議録 GaN Schottky diode ultraviolet detectors grown by molecular beam epitaxy

Misra,M., Sampath,A.V., Iliopoulos,E., Moustakas,T.D.

SPIE - The International Society for Optical Engineering
4 国際会議録 Electron Mobility of n-Type GaN Films

Ng, H. M., Doppalapudi, D., Singh, R., Moustakas, T. D.

MRS - Materials Research Society
10 国際会議録 Group-III nitride VCSEL structures grown by molecular beam epitaxy

Ng,H.M., Moustakas,T.D.

SPIE - The International Society for Optical Engineering
5 国際会議録 Phase Separation and Atomic Ordering in AlGalnN Alloys

Moustakas, T. D., Singh, R., Korakakis, D., Doppalapudi, D., Ng, H. M., Sampath, A., Iliopoulos, E., Misra, M.

MRS - Materials Research Society
11 国際会議録 A comparative study of GaN diodes grown by MBE on sapphire and HVPE-GaN/sapphire substrates

Sampath, A. V., Misra, M., Seth, K., Fedyunin, Y., Ng. H. M., Iliopoulos, E., Feit, Z., Moustakas, T. D.

MRS-Materials Research Society
6 国際会議録 MBE Growth of GaN Using NH3 and Plasma Sources

Sampath, A. V., Bhattacharyya, A., Sandeep, I., Ng, H. M., Iliopoulos, E., Moustakas, T. D.

Materials Research Society
12 国際会議録 Ultraviolet Photoconducting Detectors based on Ordered AlGaN films grown by Molecular Beam Epitaxy

Misra, M., Korakakis, D., Ng, H.M., Moustakas, T.D.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12