Diffusion Model of Point Defects in Silicon Crystals During Melt-Growth

Diffusion Model of Point Defects in Silicon Crystals During Melt-Growth

著者名:

掲載資料名:

Proceedings of the Fifth International Symposium on High Purity Silicon V

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

98-13

発行年:

1998

開始ページ:

41

終了ページ:

54

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772075 [1566772079]

言語:

英語

請求記号:

E23400/98-13

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013916
シリーズID:	PA00000028
会議名:	International Symposium on High Purity Silicon ; Meeting of the Elecrochemical Society
回次:	5th ; 194th
会議開催地:	Boston, MA, USA
会議開催年:	1998.11.02-1998.11.06

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1 国際会議録 SIMULATION OF THE POINT DEFECT DIFFUSIONAND GROWTH CONDITION FOR DEFECT FREE CZ SILICON CRYSTAL Nakamura, K., Saishoji, T., Tomioka, J. Electrochemical Society	7 国際会議録 Formation Mechanism of Voids and Oxide Precipitates in Silicon Crystals（Invited Paper） Nakamura, A., Saishoji, T., Tomioka, T. Electrochemical Society
2 国際会議録 SIMULATION OF THE POINT DEFECT DIFFUSIONAND GROWTH CONDITION FOR DEFECT FREE CZ SILICON CRYSTAL Nakamura, K., Saishoji, T., Tomioka, J. Electrochemical Society	8 国際会議録 The Formation Mechanism of Coupled Voids in Czochralski Silicon Ishikawa, F., Sadohara, S., Saishoji, T., Nakamura, K., Tomioka, J. Electrochemical Society
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