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The use of amorphous SiO and SiO2 to passivate AuGe based ohmic contact for GaAs ICs

著者名:
LaRoche, J.R.
Ren, F.
Lothian, J.R.
Hong, J.
Lambers, E.
Pearton, S.J.
さらに 1 件
掲載資料名:
Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX)
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
98-12
発行年:
1998
開始ページ:
238
終了ページ:
244
出版情報:
Pennington, N. J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772228 [1566772222]
言語:
英語
請求記号:
E23400/98-12
資料種別:
国際会議録

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