Wet and Dry Etch Selectivity For the GaAs/AlGaAs and GaAs/InGaP Systems

Wet and Dry Etch Selectivity For the GaAs/AlGaAs and GaAs/InGaP Systems

著者名:

掲載資料名:

Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX)

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

98-12

発行年:

1998

開始ページ:

201

終了ページ:

212

出版情報:

Pennington, N. J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772228 [1566772222]

言語:

英語

請求記号:

E23400/98-12

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013915
シリーズID:	PA00000028
会議名:	Meeting of the Electrochemical Society
回次:	194th
会議開催地:	Boston, MA, USA
会議開催年:	1998.11.01-1998.11.06

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2 国際会議録 Damage Investigation of GaAs and InGaP Dry Etched with an Electron Cyclotron Resonance Source Cole, M.W., Han, W.Y., Pfeffer, R.L., Eckart, D.W., Pang, S.W., Ko, K.K., Ren, F., Hobson, W.S., Lothian, J.R., Lopata, … Electrochemical Society	8 国際会議録 Dry Etching of InGaP and AlInP in CH4/H2/Ar Lee, J. W., Pearton, S. J., Santana, C. J., Lambers, E. S., Abernathy, C. R., Hobson, W. S., Ren, F. MRS - Materials Research Society
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4 国際会議録 Damage Introduction in InGaP and AlGaAs by Electron Cyclotron Resonance Ar Plasmas Lee, J. W., Pearton, S. J., Stradtmann, R. R., Abernathy, C. R., Hobson, W. S., Ren, F. MRS - Materials Research Society	10 国際会議録 IODINE-BASED DRY ETCHING CHEMISTRIES FOR InP AND RELATED COMPOUNDS Pearton, S.J., Chakrabarti, U.K., Katz, A., Abernathy, C.R., Hobson, W.S., Ren, F., Fullowan, T.R. Materials Research Society
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