InGaP/GaAs Heterostructure Bipolar Transistors

InGaP/GaAs Heterostructure Bipolar Transistors

著者名:

掲載資料名:

Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX)

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

98-12

発行年:

1998

開始ページ:

71

終了ページ:

81

出版情報:

Pennington, N. J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772228 [1566772222]

言語:

英語

請求記号:

E23400/98-12

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013915
シリーズID:	PA00000028
会議名:	Meeting of the Electrochemical Society
回次:	194th
会議開催地:	Boston, MA, USA
会議開催年:	1998.11.01-1998.11.06

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2 国際会議録 Δ-Doping InGaP/GaAs Heterojunction Bipolar Transistors Liu, W.C., Cheng, S.Y., Chang, W.L., Pan, H.J., Shie, Y.H. Electrochemical Society	8 国際会議録 ELECTRICAL CHARACTERIZATION OF BEAM-RECRYSTALLIZED SOI STRUCTURES USING A DEPLETION MODE TRANSISTOR Vu, D.P., Chantre, A., Ronzani D., Pfister, J.C. Materials Research Society
3 国際会議録 InGaP/GaAs BASED SINGLE AND DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS GROWN BY MOMBE Ren, F., Abernathy, C.R., Pearton, S.J., Wisk, P.W., Esagui, R. Materials Research Society	9 国際会議録 Optimization of Heterostructure Bipolar Transistors in SiC Chen, C. C., Horsfall, A. B., Wright, N. G., O'Neill, A. G. Trans Tech Publications
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