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New n+-GaAs/Δ(p+)-GaInP/n-GaAs Camel-Gate HFET with High Breakdown Voltage and Low Leakage Current

著者名:
掲載資料名:
Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
98-2
発行年:
1998
開始ページ:
455
終了ページ:
460
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771948 [1566771943]
言語:
英語
請求記号:
E23400/98-2
資料種別:
国際会議録

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