Infared LEDs Based on Er Doping of III-V Nitride Semiconductors

Infared LEDs Based on Er Doping of III-V Nitride Semiconductors

著者名:

掲載資料名:

Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

98-2

発行年:

1998

開始ページ:

10

終了ページ:

18

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771948 [1566771943]

言語:

英語

請求記号:

E23400/98-2

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013905
シリーズID:	PA00000028
会議名:	Symposium on Light Emitting Devices for Optoelectronic Applications ; Meeting of the Electrochemical Society
回次:	1998 ; 193rd
会議開催地:	San Diego, CA, USA
会議開催年:	1998.05.03-1998.05.08

類似資料:

1 国際会議録 Evaluation of Erbium Doped III-Nitride Semiconductors for Optoelectronic Applications Hoemmerich, U., Thaik, M., Zavada, J.M., Schwartz, R.N., Wilson, R.G., Pearton, S.J., Abernathy, C.R., MacKenzie, J.D. Electrochemical Society	7 国際会議録 Comparison of the optical properties of Er3+ doped gallium nitride prepared by metalorganic molecular beam epitaxy (MOMBE) and solid source molecular beam … Hommerich, U. H., Seo, J. T., MacKenzie, J. D., Abernathy, C. R., Birkhahn, R., Steckl, A. J., Zavada, J. M. MRS-Materials Research Society
2 国際会議録 High-Temperature Photoluminescence and Photo-luminescence Excitation Spectroscopy of Er-Doped Gallium Nitride Hommerich, U., Thaik, Myo, Robinson-Brown, T., MacKenzie, J. D., Abernathy, C. R., Pearton, S. J., Wilson, R. G., … MRS - Materials Research Society	8 国際会議録 Incorporation and Optical Activation of Er in Group III-N Materials Grown by Metalorganic Molecular-Beam Epitaxy MacKenzie, J. D., Abernathy, C. R., Pearton, S. J., Donovan, S. M., Hommerich, U., Thaik, M., Wu, X., Ren, F., Wilson, … MRS - Materials Research Society
3 国際会議録 1.55-ｦﾌm Er-doped GaN LED Shen,H., Pamulapati,J., Taysing,M., Wood,M.C., Lareau,R.T., Ervin,M.H., Mackenzie,J.D., Ren,F., Abernathy,C.R., … SPIE - The International Society for Optical Engineering	9 国際会議録 Er-Doping of GaN and Related Alloys Pearton, S. J., Abernathy, C. R., MacKenzie, J. D., Schwartz, R. N., Wilson, R. G., Zavada, J. M., Shul, R. J. MRS - Materials Research Society
4 国際会議録 Luminescence From Erbium-Doped Gallium Nitride Thin Films Zavada, J. M., Thaik, M., Hommerich, U., Mackenzie, J. D., Abernathy, C. R., Ren, F., Shen, H., Pamulapati, J., Jiang, … MRS - Materials Research Society	10 国際会議録 76 Effect of impurity concentration on 1.54-ｦﾌm emission from GaN:Er Abernathy,C.R., Overberg,M.J., Mackenzie,J.D., Hommerich,U., Pearton,S.J., Wilson,R.G., Zavada,J.M. SPIE - The International Society for Optical Engineering
5 国際会議録 Optical Characterization of Erbium Doped III-Nitrides Prepared by Metalorganic Molecular Beam Epitaxy Hommerich, U., Seo, J. T., Thaik, M., MacKenzie, J. D., Abernathy, C. R., Pearton, S. J., Wilson, R. G., Zavada, J. M. MRS - Materials Research Society	11 国際会議録 Hydrogen Passivation of Er-Doped AlN Pearton, S. J., Abernathy, C. R., MacKenzie, J. D., Hommerich, U., Zavada, J. M., Ren, F., Wilson, R. G., Schwartz, R. … MRS - Materials Research Society
6 国際会議録 Characterization of Er-Doped III-V Nitride Epilayers Prepared by MOMBE Zavada, J. M., Wilson, R. G., Schwartz, R. N., MacKenzie, J. D., Abernathy, C. R., Pearton, S. J., Wu, X., Hommerich, U. MRS - Materials Research Society	12 国際会議録 Hydrogen Incorporation into III-V Nitrides During Processing Pearton, S.J., Shul, R.J., Wilson, R.G., Ren, F., Zavada, J.M., Abernathy, C.R., Vartuli, C.B., Lee, J.W., Mileham, … Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12