HIGH GROWTH RATE OF SILICON CARBIDE ON SILICON (111) SUBSTRATES BY CHEMICAL VAPOR DEPOSITION USING TRIMETHYLSILANE

HIGH GROWTH RATE OF SILICON CARBIDE ON SILICON (111) SUBSTRATES BY CHEMICAL VAPOR DEPOSITION USING TRIMETHYLSILANE

著者名:

掲載資料名:

Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

98-1(2)

発行年:

1998

開始ページ:

1433

終了ページ:

1445

総ページ数:

13

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771931 [1566771935]

言語:

英語

請求記号:

E23400/98-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013904
シリーズID:	PA00000028
会議名:	International Symposium on Silicon Materials Science and Technology
回次:	8th
会議開催地:	San Diego, CA, USA
会議開催年:	1998.05.04-1998.05.08

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