LOW TEMPERATURE CLEAN FOR Si/SiGe EPITAXY FOR CMOS INTEGRATION OF HETEROJUNCTION BIPOLAR TRANSISTORS | 東京工業大学附属図書館文献データベース

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LOW TEMPERATURE CLEAN FOR Si/SiGe EPITAXY FOR CMOS INTEGRATION OF HETEROJUNCTION BIPOLAR TRANSISTORS

著者名:

Glowatzki, K.D.

さらに 5 件

掲載資料名:

Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

98-1(1)

発行年:

1998

開始ページ:

812

終了ページ:

821

総ページ数:

10

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771931 [1566771935]

言語:

英語

請求記号:

E23400/98-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013903
シリーズID:	PA00000028
会議名:	International Symposium on Silicon Materials Science and Technology
回次:	8th
会議開催地:	San Diego, CA, USA
会議開催年:	1998.05.04-1998.05.08

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