INVITED: NATURE AND GENERATION OF GROWN-IN DEFECTS IN CZOCHRALSKI SILICON CRYSTALS

INVITED: NATURE AND GENERATION OF GROWN-IN DEFECTS IN CZOCHRALSKI SILICON CRYSTALS

著者名:

Hourai, M.

掲載資料名:

Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

98-1(1)

発行年:

1998

開始ページ:

453

終了ページ:

467

総ページ数:

15

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771931 [1566771935]

言語:

英語

請求記号:

E23400/98-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013903
シリーズID:	PA00000028
会議名:	International Symposium on Silicon Materials Science and Technology
回次:	8th
会議開催地:	San Diego, CA, USA
会議開催年:	1998.05.04-1998.05.08

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2 国際会議録 Control of grown-in defects in nitrogen-doped CZ silicon crystal for new generation devices Hourai, M., Ono, T., Umeno, S., Tanaka, T., Asayaoia, E., Nishikawa, H., Sano, M., Tsuya, H. Electrochemical Society	8 国際会議録 Room Temperature Defect Etching of III-V Compounds and AIloys Grown on Si Substrate Using Hydrogen Fluoride and Nitric Acid Nishikawa,H., Soga,T., Jimbo,T., Umeno,M. Trans Tech Publications
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4 国際会議録 Growth Parameters Determining the Type of Grown-in Defects in Czochralski Silicon Crystals Hourai,M., Kajita,E., Nagashima,T., Fujiwara,H., Sadamitsu,S., Miki,S., Shigematsu,T. Trans Tech Publications	10 国際会議録 Defects Behavior on p/p+ Epitaxial Wafers During Low Temperature Device Processing Hourai, M., Asayama, E., Onno, T., Sano, M., Tsuya, H. Electrochemical Society
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