Blank Cover Image

Properties of Amorphous Nitrogenated Carbon (a-C:H:N) Films Deposited in Electron Cyclotron Resonance Plasma

著者名:
掲載資料名:
Proceedings of the Fifth International Symposium on Diamond Materials
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
97-32
発行年:
1997
開始ページ:
608
終了ページ:
618
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771856 [1566771854]
言語:
英語
請求記号:
E23400/97-32
資料種別:
国際会議録

類似資料:

1 国際会議録 Plasma Deposition of Diamond-Like Carbon and Carbon-Nitride Films in an Electron Cyclotron Resonance-Radio Frequency Discharge

Turban, G., Zarrabian, M., Hong, J.

MRS - Materials Research Society
7 国際会議録 Nitrogen Containing Hydrogenated Amorphous Carbon Prepared by Integrated Distribution Electron Cyclotron Resonance for Large Area Field Emission Displays

Conway, N.M.J., Godit, C., Equer, B.

Materials Research Society
2 国際会議録 CHARACTERIZATION OF ELECTRON CYCLOTRON RESONANCE PLASMA-DEPOSITED HYDROGENATED AMORPHOUS SILICON AND RELATED ALLOY FILMS

Essick, J.M., Pool, F.S., Shing, Y.M., Holboke, M.J.

Materials Research Society
8 国際会議録 Amorphous Silicon-Carbon Alloys Deposited by Electron-Cyclotron Resonance PECVD

Chu, V., Conde, J. P.

MRS - Materials Research Society
3 国際会議録 Properties of Gate-Quality Silicon Nitride and Oxynitride Dielectrics Deposited Using an Electron Cyclotron-Resonance Plasma Source

Landheer, D., Hulse, J.E., Quance, T., Aers, G.C., Sproule, G.I., Lennard, W.N., Simpson, P.J., Nlassoumi, G.R.

Electrochemical Society
9 国際会議録 HYDROGEN IN DIELECTRIC FILM FORMATION FROM AN ELECTRON CYCLOTRON RESONANCE PLASMA

Barbour, J. C., Stein, H. J.

Materials Research Society
4 国際会議録 Electrical Properties of Room Temperature SiO2 Deposited by a Combination of Jet Vapor and Multipolar Electron Cyclotron Resonance Plasma

Isal, G., Kovalgin, A., Holleman, J., Woerlee, P., Wallinga, H.

Electrochemical Society
10 国際会議録 HYDROGEN IN DIELECTRIC FILM FORMATION FROM AN ELECTRON CYCLOTRON RESONANCE PLASMA

Barbour, J. C., Stein, H. J.

Materials Research Society
5 国際会議録 Characteristics of Silicon Oxy-Nitride Thin Films Deposited by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition

Valade, L., deCaro, D., Casellas, H., Basso-Bert, M., Faulmann, C., Legros, I-P., Gassoux, P., Aries, L.

Electrochemical Society
11 国際会議録 Electron cyclotron resonance plasma-assisted pulsed laser deposition of carbon nitride thin films

Shi,W., Wu,J.D., Sun,J., Ling,H., Ying,Z.F., Zhou,Z.Y., Li,F.M.

SPIE-The International Society for Optical Engineering
6 国際会議録 RF bias effects on properties of hydrogenated amorphous silicon deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Hirano,Y., Sato,F., Jayatissa,A.H., Ohtake,H., Takizawa,K.

SPIE-The International Society for Optical Engineering
12 国際会議録 Using Electron Cyclotron Resonance Plasma for Depositing Epitaxial Titanium Nitride Thin Films

Murzin, I. H., Hayashi, N., Sakamoto, I.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12