Initial Stages of ss-SiC Growth by Chemical Vapor Deposition on an Ultrathin SiC Buffer Layer on Si(100)

Initial Stages of ss-SiC Growth by Chemical Vapor Deposition on an Ultrathin SiC Buffer Layer on Si(100)

著者名:

掲載資料名:

Chemical vapor deposition : proceedings of the Fourteenth International Conference and EUROCVD-11

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

97-25

発行年:

1997

開始ページ:

1409

終了ページ:

1416

総ページ数:

8

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771788 [1566771781]

言語:

英語

請求記号:

E23400/97-25

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013887
シリーズID:	PA00000028
会議名:	International Conference on Chemical Vapor Deposition ; EUROCVD
回次:	14th ; 11th
会議開催地:	Paris, France
会議開催年:	1997.09.05-1997.09.09

類似資料:

1 国際会議録 Growth Mode and Kinetics of Atmospheric Pressure Chemical Vapour Deposition of β-SiC on Si(100)Substrate Ferro,G., Vincent,H., Monteil,Y., Chaussende,D., Bouix,J. Trans Tech Publications	7 国際会議録 Effect of the Si Droplet Size on the VLS Growth Mechanism of SiC Homoepitaxial Layers Ferro, G., Chaussende, D., Cauwet, F., Monteil, Y. Trans Tech Publications
2 国際会議録 REACTIVE CHEMICAL VAPOR DEPOSITION (R.C.V.D.) AS A METHOD FOR COATING CARBON FIBRE WITH CARBIDES Bouix, J., Vincent, C., Vincent, H., Favre, R. Materials Research Society	8 国際会議録 Effect of the Si Droplet Size on the VLS Growth Mechanism of SiC Homoepitaxial Layers Ferro, G., Chaussende, D., Cauwet, F., Monteil, Y. Trans Tech Publications
3 国際会議録 Checker-Board Carbonization for Control and Reduction of the Mean Curvature of 3C-SiC Layers Grown on Si(100) Substrates Chassagne, T., Ferro, G., Haas, H., Leycuras, A., Mank, H., Monteil, Y. Trans Tech Publications	9 国際会議録 Potential of HMDS/C3H8 Precursor System for the Growth of State of the Art Heteroepitaxial 3C-SiC Layers on Si(100) Ferro, G., Camassel, J., Juillaguet, S., Balloud, C., Polychroniadis, E.K., Stoimenos, Y., Seigle-Ferrand, P., Dazord, … Trans Tech Publications
4 国際会議録 SiO2 as Oxygen Source for the Chemical Vapor Transport of SiC Jacquier, C., Ferro, G., Cauwet, F., Monteil, Y. Trans Tech Publications	10 国際会議録 Electrical Characterization of Heavily Al Doped 4H-SiC Layer Grown by Vapor-Liquid-Solid Epitaxy in Al-Si Melt Godignon, P., Jacquier, C., Blanque, S., Montserrat, J., Ferro, G., Contreras, S., Zielinski, M., Monteil, Y. Trans Tech Publications
5 国際会議録 SiO2 as Oxygen Source for the Chemical Vapor Transport of SiC Jacquier, C., Ferro, G., Cauwet, F., Monteil, Y. Trans Tech Publications	11 国際会議録 Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt Jacquier, C., Ferro, G., Balloud, C., Zielinski, M., Camassel, J., Polychroniadis, E., Stoemenos, J., Cauwet, F., … Trans Tech Publications
6 国際会議録 Boron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC Layers M. Soueidan, G. Ferro, B. Nsouli, N. Habka, V. Souliere, G. Younes, K. Zahraman, J.M. Bluet, Y. Monteil Trans Tech Publications	12 国際会議録 Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition Kordina,O., Irvine,K., Sumakeris,J., Kong,H.S., Paisley,M.J., ,C.H.Carter,Jr. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12