Characterization of deep levels in oxygen-implanted silicon wafers by capacitance deep level transient spectroscopy

Characterization of deep levels in oxygen-implanted silicon wafers by capacitance deep level transient spectroscopy

著者名:

Kang, H.S.

掲載資料名:

Proceedings of the Eighth International Symposium on Silicon-on-Insulator Technology and Devices

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

97-23

発行年:

1997

開始ページ:

155

終了ページ:

161

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771764 [1566771765]

言語:

英語

請求記号:

E23400/97-23

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013885
シリーズID:	PA00000028
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society ; Annual Meeting of the International Society of Electrochemistry
回次:	8th ; 192nd ; 48th
会議開催地:	Paris, France
会議開催年:	1997.08.31-1997.09.05

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