Epitaxial Lateral Overgrowth of Wide Dislocation-Free GaAs on Si Substrate

Epitaxial Lateral Overgrowth of Wide Dislocation-Free GaAs on Si Substrate

著者名:

掲載資料名:

Proceedings of the Twenty-Seventh State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVII)

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

97-21

発行年:

1997

開始ページ:

196

終了ページ:

200

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771498 [1566771498]

言語:

英語

請求記号:

E23400/97-21

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013883
シリーズID:	PA00000028
会議名:	State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Meeting of the Electrochemical Society
回次:	27th ; 192nd
会議開催地:	Paris, France
会議開催年:	1997.08.31-1997.09.05

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