Doping of InSb and InAs Using CBr4 During Growth by Gas Source Molecular Beam Epitaxy

Doping of InSb and InAs Using CBr4 During Growth by Gas Source Molecular Beam Epitaxy

著者名:

掲載資料名:

Proceedings of the Twenty-Seventh State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVII)

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

97-21

発行年:

1997

開始ページ:

140

終了ページ:

148

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771498 [1566771498]

言語:

英語

請求記号:

E23400/97-21

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013883
シリーズID:	PA00000028
会議名:	State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Meeting of the Electrochemical Society
回次:	27th ; 192nd
会議開催地:	Paris, France
会議開催年:	1997.08.31-1997.09.05

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