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In-Situ Study of the Perturbed Layer Formed During Silicon Etching in Cl2 and HBr Low-Pressure, High Density Plasmas

著者名:
掲載資料名:
Proceedings of the Second International Symposium on Process Control, Diagnostics, and Modeling in Semiconductor Manufacturing
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
97-9
発行年:
1997
開始ページ:
168
終了ページ:
175
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771368 [1566771366]
言語:
英語
請求記号:
E23400/97-9
資料種別:
国際会議録

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