A Physically Based Predictive Model of Charge Trapping in Gate Oxides

A Physically Based Predictive Model of Charge Trapping in Gate Oxides

著者名:

掲載資料名:

Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

97-10

発行年:

1997

開始ページ:

275

終了ページ:

284

総ページ数:

10

出版情報:

Pennington, New Jersey: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771375 [1566771374]

言語:

英語

請求記号:

E23400/97-10

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013870
シリーズID:	PA00000028
会議名:	Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
回次:	4th
会議開催地:	Montreal, QC, Canada
会議開催年:	1997.05.04-1997.05.09

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