Blank Cover Image

Influence of Oxidation on the Photoluminescence Properties of Porous SiGe

著者名:
Lebib, S.
Cantin, J.L.
von Bardeleben, H.J.
Cernogora, J.
Fave, J.L.
Roussel, J.
Wang, Y.S.
Ricolleau, C.
Poulin, S.
Yelon, A.
さらに 5 件
掲載資料名:
Proceedings of the International Symposium on Pits and Pores--Formation, Properties, and Significance for Advanced Luminescent Materials
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
97-7
発行年:
1997
開始ページ:
410
終了ページ:
421
総ページ数:
12
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771344 [156677134X]
言語:
英語
請求記号:
E23400/97-7
資料種別:
国際会議録

類似資料:

1 国際会議録 Forming Gas Annealing of the Carbon PbC Center in Oxidized Porous 3C- and 4H-SiC: An EPR Study

Cantin, J.L., von Bardeleben, H.J.

Trans Tech Publications
7 国際会議録 EPR Study of Electron Irradiation-Induced Defects in Semi-Insulating SiC:V

von Bardeleben, H.J., Cantin, J.L., Reshanov, S.A., Rastegaev, V.P.

Trans Tech Publications
2 国際会議録 EPR Studies of Interface Defects in n-Type 6H-SiC/SiO2 Using Porous SiC

von Bardeleben, H.J., Cantin, J.L., Mynbaeva, M., Saddow, S.E.

Trans Tech Publications
8 国際会議録 EPR Studies of SiCISiO2 Interfaces in n-type 4H-and 6H- Oxidized Porous SIC

von Bardeleben, H.J., Cantin, J.L., Mynbaeva, M., Saddow, S.E., Shishkin, Y., Devaty, R.P., Choyke, W.J.

Electrochemical Society
3 国際会議録 Electron Paramagnetic Resonance Study of Defects at Nitric Oxide Treated Si/SiO2 and Si/Si3N4 Interfaces

Cantin, J.L., von Bardeleben, H.-J.

Electrochemical Society
9 国際会議録 Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC

von Bardeleben, H.J., Cantin, J.L., Shishkin, Y., Devaty, R.P., Choyke, W.J.

Trans Tech Publications
4 国際会議録 A Combined Photoluminescence aha Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC

Sullivan, W., Steeds, J.W., von Bardeleben, H.J., Cantin, J.L.

Trans Tech Publications
10 国際会議録 Interface and Volume Defects in SiNx:H/<100>Si Prepared by DECR Plasma Deposition

Aubert, P., Delmotte, F., Hugon, M.C., Agius, B., Cantin, J.L., von Bardeleben, H.J.

Electrochemical Society
5 国際会議録 EPR Study of the Defects in Porous Si/SiO x N y and Si0.80Ge0.20/SiGeO2

Cantin, J.L., Schoisswohl, M., von Bardeleben, H.J., Morazzani, V., Ganem, J.-J., Trimaille, I.

Electrochemical Society
11 国際会議録 Intrinsic Defects in 6H-SiC Generated by Electron Irradiation at the Silicon Displacement Threshold

von Bardeleben, H.J., Cantin, J.L., Baranov, P.G., Mokhov, E.N.

Trans Tech Publications
6 国際会議録 EPR Study of Proton Implantation Induced Intrinsic Defects in 6H- and 4H-SiC

von Bardeleben, H.J., Cantin, J.L.

Trans Tech Publications
12 国際会議録 Phosphorus-Related Shallow and Deep Defects in 6H-SiC

Baranov, P.G., Ilyin, I.V., Mokhov, E.N., von Bardeleben, H.J., Cantin, J.L.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12