Oxide Defects Annihilation/Generation by High-Temperature Annealing: A Gate Oxide Integrity Evaluation

Oxide Defects Annihilation/Generation by High-Temperature Annealing: A Gate Oxide Integrity Evaluation

著者名:

掲載資料名:

ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

97-3

発行年:

1997

開始ページ:

183

終了ページ:

196

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771306 [1566771307]

言語:

英語

請求記号:

E23400/970512

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013864
シリーズID:	PA00000028
会議名:	International Symposium on Ultralarge Scale Integration Science and Technology
回次:	6th
会議開催地:	Montreal, Quebec, Canada
会議開催年:	1997.05.05-1997.05.09

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