Comparison Between the Cryogenic Behaviour of Deep Submicron Bulk Si and SOI CMOS Devices

Comparison Between the Cryogenic Behaviour of Deep Submicron Bulk Si and SOI CMOS Devices

著者名:

掲載資料名:

Proceedings of the fourth Symposium on Low Temperature Electronics and High Temperature Superconductivity

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

97-2

発行年:

1997

開始ページ:

171

終了ページ:

186

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771290 [1566771293]

言語:

英語

請求記号:

E23400/970511

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013863
シリーズID:	PA00000028
会議名:	Symposium on Low Temperature Electronics and High Temperature Superconductivity ; Meeting of the Electrochemical Society
回次:	4th ; 191st
会議開催地:	Montreal, Canada
会議開催年:	1997.05.04-1997.05.11

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