Investigation on Low Density Defects in Czochralski Silicon Crystals: Their Detectability, Formation Kinetics and Influence on Gate Oxide Integrity

Investigation on Low Density Defects in Czochralski Silicon Crystals: Their Detectability, Formation Kinetics and Influence on Gate Oxide Integrity

著者名:

掲載資料名:

Proceedings of the Fourth International Symposium on High Purity Silicon

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

96-13

発行年:

1996

開始ページ:

160

終了ページ:

169

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771566 [1566771560]

言語:

英語

請求記号:

E23400/963433

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013846
シリーズID:	PA00000028
会議名:	International Symposium on High Purity Silicon ; Meeting of the Elecrochemical Society
回次:	4th ; 190h
会議開催地:	San Antonio, Texas, USA
会議開催年:	1996.10.06-1996.10.11

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2 国際会議録 Gate oxide Integrity Response as a Function of Near the Surface Crystal Defects Morphology Borionetti,G., Godio,P., Bonoli,F., Cornara,M., Orizio,R., Falster,R. Electrochemical Society, SPIE-The International Society for Optical Engineering	8 国際会議録 Control of Grown-in Defects in Czochralski Silicon Crystals Hourai, M., Kelly, G.P., Tanaka, T., Umeno, S., Ogushi, S. Electrochemical Society
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5 国際会議録 STUDY OF THE STACKING FAULT NUCLEI GENERATION/ DISSOLUTION TEMPERATURES ON CZ SILICON WAFERS AND ITS DEPENDENCE ON THE CRYSTAL POSITION Porrini, M., Borionetti, G., Ferrero, G. Electrochemical Society	11 国際会議録 MODELLING OF CRYSTAL ORIGINATED PARTICLES AND THEIR IMPACT ON GATE OXIDE INTEGRITY Bearda, T., Mertens, P.W., Woerlee, P.H., Wallinga, H., Sebmolke, R., Heyns, M. Electrochemical Society
6 国際会議録 Dependence of the Gate Oxide Integrity on the Crystal Originated Defects in Czochralski Silicon Wafers Ravi, J., Wijaranakula, W. Electrochemical Society	12 国際会議録 High Sensitivity Measurement of Nitrogen in Czochralski Silicon Porrini, M., Pretto, M.G., Scala, R., Voronkov, V.V. SPIE-The International Society for Optical Engineering

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