Simplified Modeling of ECR-RIBE Reactor for the Optimization of GaAs Etching Process with C12

Simplified Modeling of ECR-RIBE Reactor for the Optimization of GaAs Etching Process with C12

著者名:

Shimogaki, Y.

掲載資料名:

Proceedings of the eleventh International Symposium on Plasma Processing

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

96-12

発行年:

1996

開始ページ:

83

終了ページ:

88

総ページ数:

6

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771641 [1566771641]

言語:

英語

請求記号:

E23400/962354

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013845
シリーズID:	PA00000028
会議名:	International Symposium on Plasma Processing ; Meeting of the Electrochemical Society
回次:	11th ; 189th
会議開催地:	Los Angels, CA, USA
会議開催年:	1996.05.05-1996.05.10

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