Blank Cover Image

An investigation of refractory metal ohmic contacts to Gallium Nitride

著者名:
掲載資料名:
Proceedings of the First Symposium on III-V Nitride Materials and Processes
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
96-11
発行年:
1996
開始ページ:
133
終了ページ:
141
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771634 [1566771633]
言語:
英語
請求記号:
E23400/962353
資料種別:
国際会議録

類似資料:

1 国際会議録 Ohmic contacts on binary and ternary nitrides

Ren, F., Pearton, S.J., Donovan, S., Abernathy, C.R., Cole, M.W.

Electrochemical Society
7 国際会議録 Ohmic Contact Formation to Doped GaN

Smith, L. L., Bremser, M. D., Carlson, E. P., Weeks, T. W., Jr., Huang, Y., Kim, M. J., Carpenter, R. W., Davis, R. F.

MRS - Materials Research Society
2 国際会議録 Epitaxial Growth of InGaAs by LP-MOCVD Under Highly Stable Reaction Chamber Conditions

Hickman II, R., Kapoor, V.J., Yu, P.W.

Electrochemical Society
8 国際会議録 CHARACTERIZATION OF PULSED LASER BEAM MIXED AuTe/GaAs OHMIC CONTACTS

Wuyts, K., Silverans, R.E., Van Hove, M., Van Rossum, M.

Materials Research Society
3 国際会議録 Al-Si-Ti Ohmic Contacts on N-Type Gallium Nitride

N. Thierry-Jebali, O. Ménard, A. Yvon, E. Collard, M. Zhe

Trans Tech Publications
9 国際会議録 ON THE OHMIC CONTACT FORMATION MECHANISM IN THE Au/Te/n-GaAS SYSTEM

Wuyts, K., Langouche, G., Vanderstraeten, H., Silverans, R. E., Van Hove, M., Van Rossum, M., Munder, H., Luth, H.

Materials Research Society
4 国際会議録 Uniformity, High-Temperature Performance and Reliability of X-band Nitride Power HEMTs Fabricated From 2-Inch Epitaxy

Hickman, R., Hove, J. M. Van, Chow, P. P., Klaassen, J. J., Wowchack, A. M., Polley, C. J.

MRS - Materials Research Society
10 国際会議録 The microstructure and electrical properties of directly deposited TiN ohmic contacts to gallium nitride

Ruterana, P., Nouet, G., Kehagias, Th., Komninou, Ph., Karakostas, Th., Poisson, M. A. di Forte, Huet, F.

MRS-Materials Research Society
5 国際会議録 A COMPARATIVE STUDY OF Te- AND Ge BASED OHMIC CONTACTS ON GaAs

Wusts, K., Vantomme, A., Silverans, R. E, Hove, Van M., Rossum, Van M.

Materials Research Society
11 国際会議録 Ohmic Contact Formation on Silicon-Doped Gallium Nitride Epilayers by Low Temperature Annealing

Prakash, S., Tan, L. S., Ng, K. M., Raman, A., Chua, S. J., Wee, A. T. S., Lim, S. L.

Trans Tech Publications
6 国際会議録 DOPING AND BEYOND: TOWARDS A COMMON MODEL FOR THE OHMIC CONTACT FORMATION MECHANISM IN THE Au/Te/Au/-,AuGe/-, AND

Wuyts, K., Watte, J., Silverans, R. E., M-nder, H., Berger. M. G., L-th, H., Van Hove M,, Van Rossum,. M.

Materials Research Society
12 国際会議録 Investigation of Aluminum and Titanium/Aluminum Contacts to n-Type Gallium Nitride

Luther, B. P., Mohney, S. E., Jackson, T. N., Khan, M. Asif, Chen, Q., Yang, J. W.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12