Shallow dopants and the role of hydrogen in epitaxial layers of Gallium Nitride (GaN)
- 著者名:
Gotz, W. Johson, N.M. Bour, D.P. Chen, C. Liu, H. Imler, W. - 掲載資料名:
- Proceedings of the First Symposium on III-V Nitride Materials and Processes
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 96-11
- 発行年:
- 1996
- 開始ページ:
- 87
- 終了ページ:
- 99
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771634 [1566771633]
- 言語:
- 英語
- 請求記号:
- E23400/962353
- 資料種別:
- 国際会議録
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