Growth modes and perfection of epitaxial GaN layers

Growth modes and perfection of epitaxial GaN layers

著者名:

掲載資料名:

Proceedings of the First Symposium on III-V Nitride Materials and Processes

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

96-11

発行年:

1996

開始ページ:

20

終了ページ:

36

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771634 [1566771633]

言語:

英語

請求記号:

E23400/962353

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013844
シリーズID:	PA00000028
会議名:	Symposium on III-V Nitride Materials and Processes
回次:	1st
会議開催地:	Los Angeles, CA. USA
会議開催年:	1996.05.06-1996.05.08

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