Selective Epitaxial Growth of Silicon by Nitrogen Ion Implantation Technique

Selective Epitaxial Growth of Silicon by Nitrogen Ion Implantation Technique

著者名:

掲載資料名:

Proceedings of the Thirteenth International Symposium on Chemical Vapor Deposition

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

96-5

発行年:

1996

開始ページ:

342

終了ページ:

347

総ページ数:

6

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771559 [1566771552]

言語:

英語

請求記号:

E23400/962104

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013838
シリーズID:	PA00000028
会議名:	International Symposium on Chemical Vapor Deposition - CVD
回次:	13th
会議開催地:	Los Angeles, CA, USA
会議開催年:	1996.05.05-1996.05.10

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