(311) Defect Formation and Evolution for Si and B Implants
- 著者名:
- 掲載資料名:
- Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 96-4
- 発行年:
- 1996
- 開始ページ:
- 374
- 終了ページ:
- 378
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771542 [1566771544]
- 言語:
- 英語
- 請求記号:
- E23400/961823
- 資料種別:
- 国際会議録
類似資料:
Materials Research Society |
Materials Research Society |
Materials Research Society |
Electrochemical Society |
MRS - Materials Research Society |
Materials Research Society |
4
国際会議録
Exploring Alternative Annealing Methods for Shallow Junction Formation in Ion Implanted Silicon
Electrochemical Society |
10
国際会議録
Concentration Dependence of Boron-Interstitial Cluster (BIC) Formation in Silicon-on-Insulator (SOI)
Materials Research Society |
Materials Research Society |
11
国際会議録
DEFECT STRUCTURES GENERATED BY BURIED AMORPHOUS LAYER REGROWTH IN <10> ARSENIC IMPLANTED SILICON
Materials Research Society |
Materials Research Society |
Materials Research Society |