Transient Enhanced Diffusion for Implanted Doses Exceeding the Threshold Dose for Amorphization and for Implants into Preamorphized Substrates
- 著者名:
- 掲載資料名:
- Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 96-4
- 発行年:
- 1996
- 開始ページ:
- 135
- 終了ページ:
- 141
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771542 [1566771544]
- 言語:
- 英語
- 請求記号:
- E23400/961823
- 資料種別:
- 国際会議録
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12
国際会議録
The Source Of Transient Enhanced Diffusion In Sub-KeV Implanted Boron In Crystalline Silicon
Materials Research Society |