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Evidence of Two Sources of Interstitials for TED in Boron Implanted Silicon

著者名:
掲載資料名:
Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
96-4
発行年:
1996
開始ページ:
116
終了ページ:
126
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771542 [1566771544]
言語:
英語
請求記号:
E23400/961823
資料種別:
国際会議録

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