Ultrathin Oxide Reliability: Effects of Gate Doping Concentration and Poly-Si/SiO2 Interface Stress Relaxation

Ultrathin Oxide Reliability: Effects of Gate Doping Concentration and Poly-Si/SiO2 Interface Stress Relaxation

著者名:

掲載資料名:

The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

96-1

発行年:

1996

開始ページ:

744

終了ページ:

752

総ページ数:

9

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771511 [156677151X]

言語:

英語

請求記号:

E23400/962115

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013835
シリーズID:	PA00000028
会議名:	International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface
回次:	3rd
会議開催地:	Los Angeles, CA, USA
会議開催年:	1996.05.05-1996.05.10

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