Blank Cover Image

Chemical Structure Changes Observed During Si-SiO2 Interface Formation

著者名:
Hattori, T.  
掲載資料名:
The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
96-1
発行年:
1996
開始ページ:
392
終了ページ:
405
総ページ数:
14
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771511 [156677151X]
言語:
英語
請求記号:
E23400/962115
資料種別:
国際会議録

類似資料:

1 国際会議録 INITIAL STAGE OF SiO2/Si INTERFACE FORMATION ON HYDROGEN-TERMINATED SILICON SURFACES

Hattori, T., Nohira, H., Ohishi, K., Shimizu, Y., Tamura, Y.

MRS - Materials Research Society
7 国際会議録 *CHEMICAL STRUCTURES OF NATIVE OXIDES FORMED DURING WET CHEMICAL TREATMENTS ON NH4F TREATED Si(111) SURFACES

Hattori, Takeo, Ogawa, Hiroki

Materials Research Society
2 国際会議録 Chemical Structures of Oxynitride/Si(100) Interface

Takahashi, K., Nohira, H., Kato, H., Tamura, N., Hikazutani, K., Sano, S., Hattori, T.

Electrochemical Society
8 国際会議録 Structure of the Si-SiO2 interface

Plucinski,K.J.

SPIE - The International Society for Optical Engineering
3 国際会議録 Valence-Band Discontinuity at and Near the SiO2/Si(111) Interface

Nohira, Hiroshi, Hattori, Takeo

MRS - Materials Research Society
9 国際会議録 Oxidation of Si(OO1) Surface and Formation of Si/SiO2 Interface

Uchiyarna, T., Uda, T., Terakura, K.

Electrochemical Society
4 国際会議録 Morphological Change in Surface and Interface during Ultrathin SiO₂ Film Growth

R. Hasunuma, J. Okamoto, N. Tokuda, K. Yamabe

Electrochemical Society
10 国際会議録 Effect of Deposition Temperature on Chemical Structure of Lanthanum Oxide/Si Interface Structure

H. Nohira, T. Matsuda, K. Tachi, Y. Shiino, J. Song, Y. Kuroki, J. Ng, P. Ahmet, K. Kakushima, K. Tsutsui, E. Ikenaga, …

Electrochemical Society
5 国際会議録 SURFACE CLEANING PRIOR TO FORMATION OF Si/SiO2 INTERFACES BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (RPECVD)

Lamb, H.H., Kalem, S., Bedge, S., Yasuda, T., Ma, Y., Lucovsky, G.

Materials Research Society
11 国際会議録 Atomic Dynamics During Silicon Oxidation and the Nature of Defects at the Si-SiO2 Interface

Pantelides, S. T., Ramamoorthy, M.

MRS - Materials Research Society
6 国際会議録 Electronic Structures of SiO2/Si(O01) Interfaces

Yamasaki, T., Kaneta, C., Uchiyama, T., Uda, T., Terakura, K.

Electrochemical Society
12 国際会議録 Si Wire Light Emission Changes During Si/SiOx Interface Formation

Becenil-Espinoza, F.G., Torchynska, T.V., Rodriguez, M.Morales, Khomenkova, L., Scherbina, L.V.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12