Atomic Transport During Thermal Nitridation of SiO2 Films in NH3 and During Subsequent Thermal Reoxidation

Atomic Transport During Thermal Nitridation of SiO2 Films in NH3 and During Subsequent Thermal Reoxidation

著者名:

Baumvol, I.J.R.

掲載資料名:

The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

96-1

発行年:

1996

開始ページ:

97

終了ページ:

108

総ページ数:

12

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771511 [156677151X]

言語:

英語

請求記号:

E23400/962115

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013835
シリーズID:	PA00000028
会議名:	International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface
回次:	3rd
会議開催地:	Los Angeles, CA, USA
会議開催年:	1996.05.05-1996.05.10

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