Investigation of Wet Chemical Etching of InGaAlP Alloys

Investigation of Wet Chemical Etching of InGaAlP Alloys

著者名:

Lee, J.W.

掲載資料名:

Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII)

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

95-21

発行年:

1995

開始ページ:

316

終了ページ:

326

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771160 [1566771161]

言語:

英語

請求記号:

E23400/961020

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013826
シリーズID:	PA00000028
会議名:	Symposium on Wide Bandgap Semiconductors and Devices ; SOTAPOCS ; Meeting of the Electrochemical Society
回次:	1995 ; 23rd ; 188th
会議開催地:	Chicago, IL, USA
会議開催年:	1995.10.08-1995.10.13

類似資料:

1 国際会議録 Comparison of ICI and IBr Plasma Chemistries for Etching of InGaAlP Alloys Hong, J., Lee, J.W, Lambers, E.S., Abernathy, C.R, Pearton, S.J., Constantine, C., Hobson, W.S. Electrochemical Society	7 国際会議録 Cl2-Based ECR Etching of InGaP, AlInP and AlGaP Hong, J., Lee, J. W., Pearton, S. J., Santana, C., Abernathy, C. R., Hobson, W. S., Ren, F. MRS - Materials Research Society
2 国際会議録 REDUCTION OF SIDEWALL ROUGHNESS DURING DRY ETCHING OF SiO2 Ren, F., Pearton, S.J., Lothian, J.R., Abernathy, C.R., Hobson, W.S. Materials Research Society	8 国際会議録 IODINE-BASED DRY ETCHING CHEMISTRIES FOR InP AND RELATED COMPOUNDS Pearton, S.J., Chakrabarti, U.K., Katz, A., Abernathy, C.R., Hobson, W.S., Ren, F., Fullowan, T.R. Materials Research Society
3 国際会議録 High Microwave Power ECR Etching of III-V Semiconductors in CH4/H2/Ar Lee, J.W., Pearton, S.J., Lambers, E.S., Mileham, J.R., Abernathy, C.R., Hobson, W.S., Ren, F., Shul, R.J. Electrochemical Society	9 国際会議録 Electron Cyclotron Resonance Chemical Vapor Deposited Silicon Nitride for T-gate Passivation Ren, F., LaRoche, J., Anderson, T., Pearton, S.J., Lee, J.W., Johnson, D., Lothian, J.R., Lin, J., Weiner, J.S., Shul, … Electrochemical Society
4 国際会議録 Wet and Dry Etch Selectivity For the GaAs/AlGaAs and GaAs/InGaP Systems Hays, D., Abernathy, C.R., Pearton, S.J., Ren, F., Hobson, W.S. Electrochemical Society	10 国際会議録 Low temperature SiNx as a sacrificial layer in novel device fabrication Lothian, J. R., Ren, F., Pearton, S. J., Abernathy, C. R., Tseng, B., Hobson, W. S. MRS - Materials Research Society
5 国際会議録 Extremely High Etching Rate of In-Based III-V Semiconductors in BCl3/N2 Based Plasma Ren, F., Pearton, S.J., Hobson, W.S., Lothian, J.R., Lopata, J., Cole, M.W., Caballero, J.A. Electrochemical Society	11 国際会議録 DRY SURFACE CLEANING OF PLASMA-ETCHED HEMTs Pearton, S.J., Ren, F., Katz, A., Chakrabarti, U.K., Lane, E., Hobson, W.S., Kopf, R.F., Abernathy, C.R., Wu, C.S., … Materials Research Society
6 国際会議録 Dry Etching of InGaP and AlInP in CH4/H2/Ar Lee, J. W., Pearton, S. J., Santana, C. J., Lambers, E. S., Abernathy, C. R., Hobson, W. S., Ren, F. MRS - Materials Research Society	12 国際会議録 Wet and dry etching characteristics of electron beam deposited SiO and SiO2 LaRoche, J.R., Ren, F., Lothian, J.R., Hong, J., Pearton, S.J., Lambers, E. Materials Research Society

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