Operation of SiGe BICMOS Technology at Cryogenic Temperatures

Operation of SiGe BICMOS Technology at Cryogenic Temperatures

著者名:

掲載資料名:

Proceedings of the Symposium on Low Temperature Electronics and High Temperature Superconductivity

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

95-9

発行年:

1995

開始ページ:

189

終了ページ:

198

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771030 [156677103X]

言語:

英語

請求記号:

E23400/952069

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013816
シリーズID:	PA00000028
会議名:	Symposium on Low Temperature Electronics and High Temperature Superconductivity ; Meeting of the Electrochemical Society
回次:	3rd ; 187th
会議開催地:	Reno, NV, USA
会議開催年:	1995.05.21-1995.05.26

類似資料:

1 国際会議録 Status and Trends in the Cryogenic Operation of SiGe Bipolar Technology Cressler, J.D. Electrochemical Society	7 国際会議録 Operation of Silicon-Germanium CMOS on Sapphire Technology at Cryogenic Temperatures Mathew, S.J., Dubbelday, W.B., Cressler, J.D., Ott, J., Chu, J.O., Meyerson, B.S., Kavanagh, K.L., Lagnado, I. Electrochemical Society
2 国際会議録 Temperature Dependence of Early Voltage and Current Gain-Early Voltage Product in SiGe HBTs Joseph, A.J., Cressler, J.D., Richey, D.M., Harame, D.L. Electrochemical Society	8 国際会議録 Applications Focused Trends in SiGe BiCMOS Technologies (Invited paper) St Onge, S., Joseph, A., Lanzerotti, L., Feiichenfeld, N., Coolbaugh, D., Orner, B., Dunn, J., Harame, D. Electrochemical Society
3 国際会議録 The Cryogenic Operation of SiGe Heterojunction Bipolar Transistors: Status and Opportunities J.D. Cressler Electrochemical Society	9 国際会議録 Cryogenic Operation of Fully-Depleted SOI nFETs Li, Y., Cressler, J.D., Niu, G., Patel, J. Electrochemical Society
4 国際会議録 Prospects for the Cryogenic Operation of Silicon-Germanium Technology Cressler, J.D. Electrochemical Society	10 国際会議録 Potential for Silicon-Germanium-Carbon HBT Operation at Cryogenic Temperatures Jayanarayanan, S., Cressler, J.D., Richey, D.M. Electrochemical Society
5 国際会議録 The Effects of Ionizing Radiation on SiGe HBTs Operated at 77 K Babcock, J.A., Cressler, J.D., Clark, S.D., Vempati, L.S., Harame, D.L. Electrochemical Society	11 国際会議録 Trends in SiGe BiCMOS Process Integration Harame, D., Subbanna, S., Dunn, J., St Onge, S.A., Freeman, G., Malinowski, J., Groves, R., Joseph, A., Ahlgren, D., … Electrochemical Society
6 国際会議録 Issues and Opportunities for Complementary SiGe HBT Technology J.D. Cressler Electrochemical Society	12 国際会議録 Ge Profile Optimization Issues for Cryogenically Operated SiGe HBTs Joseph, A.J., Cressler, J.D. Electrochemical Society

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