Floating-induced transient effects in SOI MOSFETs and circuits

Floating-induced transient effects in SOI MOSFETs and circuits

著者名:

掲載資料名:

Proceedings of the Seventh International Symposium on Silicon-on-Insulator Technology and Devices

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

96-3

発行年:

1995

開始ページ:

212

終了ページ:

224

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771535 [1566771536]

言語:

英語

請求記号:

E23400/962142

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013813
シリーズID:	PA00000028
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Electrochemical Society Meeting
回次:	7th ; 187th
会議開催地:	Los Angeles, California, USA
会議開催年:	1996.05.05-1996.05.10

類似資料:

1 国際会議録 Transient effects of SOI transistors in circuit operation Kim, I J, Joachim, H-O, Iwamatsu, T, Yamaguchi, Y, Inoue, Y, Eikyu, K, Ishikawo, K, Uedo, K, Morinaka, H, Mashiko, K, … Electrochemical Society	7 国際会議録 Analysis of HALO implant influence on the self-heating and self-heating enhanced impact ionization on 0.13 μm floating-body partially-depleted SOI MOSFET at … Pavanello, M.A., Martino, J.A., Simoen, E., Mercha, A., Clacys, C., van Meer, H., De Meyer, K. Electrochemical Society
2 国際会議録 Impact of the Floating Body Induced Parasitic Bipolar Transistor on Hot-Carrier Effects in 0.1 μm N-Channel SOI MOSFETs Renn, S.H., Pauly, E., Pelloie, J.L., Balestra, F. Electrochemical Society	8 国際会議録 Measurement of generation lifetime in partially depleted SOI MOSFETs Shin, H C, Racanelli, M, Huang, W M, Ford, J, Foersiner, J, Shin, H, Wetteroth, T, Hong, S Q, Wilson, S R, Schroder, D … Electrochemical Society
3 国際会議録 HALO Effects on 0.13 μm Floating-Body Partially Depleted SOI n-MOSFETs iII Low Temperature Operation J. A. Martino, M. A. Pavanello, E. Simoen, C. Claeys Electrochemical Society	9 国際会議録 Edge and Floating Body Effects on Hot-Carrier-Induced Degradation in FD SOT n-MOSFETs Renn, S H, Szelag, B, Balestra, F, Raynaud, C Electrochemical Society
4 国際会議録 Reduction of the floating body effects in SOI MOSFETs by Ge ion implantation into source/drain Yoshimi, M, Nishiyama, A, Arisumi, O, Terauchi, M, Matsuzawa, K, Shigyo, N Electrochemical Society	10 国際会議録 Fully-quantum theory of SOI MOSFETs Walls, T.J., Sverdlov, V.A., Likbarev, K.K. Electrochemical Society
5 国際会議録 Detrimental edge effects on the floating body phenomena in SOI MOSFETs Duan, F.L., Zhao, X., Ioannou, D.E., Hughes, H.L., Liu, S.T. Electrochemical Society	11 国際会議録 Modelling and 2-D Numerical Simulation of Transient Phenomena in Floating Body SOI MOSFETs Ionescu, A. M., Chaudier, F., Chovet, A. MRS - Materials Research Society
6 国際会議録 Floating Body/Floating Well Effects in Deep Submicron MOSFETs at Liquid Nitrogen Temperature Simoen, E., Hayama, K., Takakura, K., Mercha, A., Claeys, C., Ohyama, H. Electrochemical Society	12 国際会議録 Measurement and Modelling of SOI MOSFETs Capacitances Tomaszewski, D., Lukasiak, L., Gibki, J., Domanski, K., Jakubowski, A., Zareba, A. SPIE-The International Society for Optical Engineering

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