Surface Evolution in a Pulsed Laser Induced Epitaxy Process of Submicron SiGe Wires
- 著者名:
- 掲載資料名:
- Proceedings of the Symposium on Nondestructive Wafer Characterization for Compound Semiconductor Materials and the twenty-second State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXII)
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 95-6
- 発行年:
- 1995
- 開始ページ:
- 326
- 終了ページ:
- 331
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771009 [1566771005]
- 言語:
- 英語
- 請求記号:
- E23400/952066
- 資料種別:
- 国際会議録
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3
国際会議録
SELECTIVE GROWTH OF HETEROEPITAXIAL GexSi1-x/Si LATERAL WELLS USING PULSED LASER INDUCED EPITAXY
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