Photoellipsometry Analysis of Doped GaAs
- 著者名:
- 掲載資料名:
- Proceedings of the Symposium on Nondestructive Wafer Characterization for Compound Semiconductor Materials and the twenty-second State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXII)
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 95-6
- 発行年:
- 1995
- 開始ページ:
- 104
- 終了ページ:
- 120
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771009 [1566771005]
- 言語:
- 英語
- 請求記号:
- E23400/952066
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
Nondestructive Characterization of n-AlGaAs/GaAs Heterojunction Structures Using Photoellipsometry
Electrochemical Society |
Trans Tech Publications |
SPIE-The International Society for Optical Engineering |
Trans Tech Publications |
SPIE-The International Society for Optical Engineering |
North-Holland |
SPIE-The International Society for Optical Engineering |
Trans Tech Publications |
SPIE-The International Society for Optical Engineering |
Electrochemical Society |
SPIE-The International Society for Optical Engineering |
12
国際会議録
Optical properties of sol-gel Ba0.7Sr0.3TiO3 thin films studied by spectroscopic ellipsometry
SPIE-The International Society for Optical Engineering |