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High Quality Oxynitride Gate Dielectrics Prepared by Reoxidation of NH3-Nitrided SiO2 and N2O-Oxide in N2O Ambient

著者名:
掲載資料名:
ULSI science and technology, 1995 : proceedings of the Fifth International Symposium on Ultra Large Scale Integration Science and Technology
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
95-5
発行年:
1995
開始ページ:
485
終了ページ:
494
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566770996 [1566770998]
言語:
英語
請求記号:
E23400/952065
資料種別:
国際会議録

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