Formation of High Quality Thin Stacked Oxynitride Gate Dielectrics by In-Situ Rapid Thermal Multiprocessing
- 著者名:
- 掲載資料名:
- ULSI science and technology, 1995 : proceedings of the Fifth International Symposium on Ultra Large Scale Integration Science and Technology
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 95-5
- 発行年:
- 1995
- 開始ページ:
- 472
- 終了ページ:
- 484
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566770996 [1566770998]
- 言語:
- 英語
- 請求記号:
- E23400/952065
- 資料種別:
- 国際会議録
類似資料:
SPIE-The International Society for Optical Engineering |
7
国際会議録
Formation of High-Quality Oxynitride Gate Dielectrics by High Pressure Thermal Oxidation of Si in NO
MRS - Materials Research Society |
SPIE-The International Society for Optical Engineering |
MRS - Materials Research Society |
Electrochemical Society |
9
国際会議録
Improved hot-carrier reliability of MOSFET analog performance with NO-nitrided SiO2 gate dielectrics
SPIE-The International Society for Optical Engineering |
Electrochemical Society |
SPIE-The International Society for Optical Engineering |
MRS - Materials Research Society |
Electrochemical Society |
Materials Research Society |
MRS - Materials Research Society |