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Actinic aerial image measurement for qualification of defect on 157-nm photomask

著者名:
Yasui, T. ( Semiconductor Leading Edge Technologies, Inc. (Japan) )
Higashikawa, I. ( Semiconductor Leading Edge Technologies, Inc. (Japan) )
Kuschnerus, P. ( Carl Zeiss Semiconductor Metrology Systems GmbH (Germany) )
Degel, W. ( Carl Zeiss Semiconductor Metrology Systems GmbH (Germany) )
Boehm, K. ( Carl Zeiss Semiconductor Metrology Systems GmbH (Germany) )
Zibold, A.M. ( Carl Zeiss Semiconductor Metrology Systems GmbH (Germany) )
Kobiyama, Y. ( Carl Zeiss Co. Ltd. (Japan) )
Urbach, J.-P. ( International SEMATECH (USA) )
Schilz, C.M. ( Infineon Technologies AG (Germany) )
Teuber Semmler, S. ( Advanced Mask Technology Ctr. GmbH & Co. KG (Germany) )
さらに 5 件
掲載資料名:
Photomask and Next-Generation Lithography Mask Technology XI
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
5446
発行年:
2004
開始ページ:
743
終了ページ:
750
総ページ数:
8
出版情報:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819453693 [0819453692]
言語:
英語
請求記号:
P63600/5446.2
資料種別:
国際会議録

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