Modeling of phosphorous diffusion in ion-implanted Si at dopant transient enhanced out-diffusion during vacuum rapid thermal annealing

Modeling of phosphorous diffusion in ion-implanted Si at dopant transient enhanced out-diffusion during vacuum rapid thermal annealing

著者名:

Kagadei, V.A. ( Research Institute of Semiconductor Devices (Russia) )
Markov, A.B. ( Institute of High Current Electronics (Russia) )

掲載資料名:

Micro- and Nanoelectronics 2003

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

5401

発行年:

2004

開始ページ:

669

終了ページ:

676

総ページ数:

8

出版情報:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819453242 [0819453242]

言語:

英語

請求記号:

P63600/5401

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013753
シリーズID:	PA00000029
会議名:	Micro- and Nanoelectronics
回次:	2003
会議開催地:	Zvenigorod, Russia
会議開催年:	2003.10.06-2003.10.10

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