Blank Cover Image

The evaluation of assist feature defect printability for sub-0.13-μm technology

著者名:
  • Jeong, C.-Y. ( Hynix Semiconductor Inc. (South Korea) )
  • Kim, Y.K. ( Hynix Semiconductor Inc. (South Korea) )
  • Park, K.-Y. ( Hynix Semiconductor Inc. (South Korea) )
  • Choi, J.S. ( Hynix Semiconductor Inc. (South Korea) )
  • Lee, J.G. ( Hynix Semiconductor Inc. (South Korea) )
掲載資料名:
Optical Microlithography XVII
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
5377
発行年:
2004
開始ページ:
1255
終了ページ:
1266
総ページ数:
12
出版情報:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819452900 [0819452904]
言語:
英語
請求記号:
P63600/5377.2
資料種別:
国際会議録

類似資料:

1 国際会議録 The study of contact hole MEEF and defect printability

Jeong, C.-Y., Lim, Y.H., Kim, H.I., Park, J.L., Choi, J.S., Lee, J.G.

SPIE - The International Society of Optical Engineering
7 国際会議録 Precision control of poly-gate CD by local OPC for elimination of microloading effect on 0.13-μm CMOS technology

Lee, T.-K., Wang, Y.-C., Chi, M.-H., Lu, C.Y., Hsieh, C.H., Liu, R.G., Liao, H.J., Yang, S.S., Chang, C.-H.

SPIE-The International Society for Optical Engineering
2 国際会議録 Evaluation of litho printability of DRAM contact hole patterns with various programmed defects

K. Seo, S. Lee, H. Kim, D. Hwang, S. Kim, G. Jeong, O. Han, C. Chen, D. Yee, E. Kim, K. Park, N. Kim, S. Choi, D. Kim, …

SPIE - The International Society of Optical Engineering
8 国際会議録 Mask error enhancement factor for sub-0.13-μm lithography

Tan,S.K., Lin,Q., Quan,C., Tay,C.J., See,A.

SPIE-The International Society for Optical Engineering
3 国際会議録 Impact of mask defect in a high MEEF process

Jeong, C.-Y., Park, K.-Y., Choi, J.S., Lee, J.G., Lee, D.-H.

SPIE-The International Society for Optical Engineering
9 国際会議録 The verification of printability about marginal defects and the detectability at the inspection tool in sub 50nm node

H. Lee, G. Jeong, K. Seo, S. Kim, C. Kim

Society of Photo-optical Instrumentation Engineers
4 国際会議録 Simulation-based defect printability analysis for 0.13-μm technology

Tinaztepe,C., Kagami,I.

SPIE-The International Society for Optical Engineering
10 国際会議録 Characterization of assist features on impact of mask error enhancement factors for sub-0.13-um technology

Tan,S.K., Lin,Q., Tay,C.J., Quan,C.

SPIE-The International Society for Optical Engineering
5 国際会議録 MEF studies for attenuated phase-shift mask for sub-0.13-μm technology using 248 nm

Tan, S.K., Lin, Q., Chua, G.S., Quan, C., Tay, C.J.

SPIE-The International Society for Optical Engineering
11 国際会議録 Identification and elimination of trench crystal defects in sub-0.13-μm era

Yeh, C.-C., Chen, C.-C., Lu, T.-H., Shen, C.-M., Chuang, J.-H., Lee, J., Fu, C., Sheu, Y.-D.

SPIE - The International Society of Optical Engineering
6 国際会議録 Precision control of poly-gate CD by local OPC for elimination of microloading effect on 0.13-μm CMOS technology

Lee, T.-K., Wang, Y.-C., Chi, M., Lu, C.Y., Hsieh, C.H., Liu, R.G., Liao, H.J., Yang, S.S., Chang, C.-H.

SPIE-The International Society for Optical Engineering
12 国際会議録 Correlation of reticle defects detectability and repairs to ArF wafer printability for 0.13-μm design rule with binary OPC/SB mask

Phan,K.A., Spence,C.A., Riddick,J., Chen,J.X., Lamantia,M., Villa,H.A.

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12