Explanation of LER using the concept of gel layer in chemically amplified photoresists

Explanation of LER using the concept of gel layer in chemically amplified photoresists

著者名:

Cho, J.Y. ( DongbuAnam Semiconductor (South Korea) )
Choi, S.J. ( Seoul National Univ. (South Korea) )
Choi, Y.J. ( DongbuAnam Semiconductor (South Korea) )
Kim, H.L. ( DongbuAnam Semiconductor (South Korea) )
Kim, K.H. ( DongbuAnam Semiconductor (South Korea) )

掲載資料名:

Advances in Resist Technology and Processing XXI

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

5376

発行年:

2004

開始ページ:

782

終了ページ:

789

総ページ数:

8

出版情報:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819452894 [0819452890]

言語:

英語

請求記号:

P63600/5376.2

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013726
シリーズID:	PA00000029
会議名:	SPIE Advanced Lithography : Advances in resist technology and processing
回次:	2004 : 21st
会議開催地:	Santa Clara, CA, USA
会議開催年:	2004.02.23-2004.02.24

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