Production control of shallow trench isolation (STI) at the 130-nm node using spectroscopic ellipsometry-based profile metrology
- 著者名:
Peters, R.M. ( KLA-Tencor Corp. (USA) ) Chiao, R.H. ( Texas Instruments, Inc. (USA) ) Eckert, T. ( Texas Instruments, Inc. (USA) ) Labra, R. ( Texas Instruments, Inc. (USA) ) Nappa, D. ( Texas Instruments, Inc. (USA) ) Tang, S. ( Texas Instruments, Inc. (USA) ) Washington, J. ( Texas Instruments, Inc. (USA) ) - 掲載資料名:
- Metrology, Inspection, and Process Control for Microlithography XVIII
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 5375
- 発行年:
- 2004
- 開始ページ:
- 798
- 終了ページ:
- 806
- 総ページ数:
- 9
- 出版情報:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819452887 [0819452882]
- 言語:
- 英語
- 請求記号:
- P63600/5375.2
- 資料種別:
- 国際会議録
類似資料:
SPIE-The International Society for Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |
Materials Research Society |
3
国際会議録
Improved shallow trench isolation and gate process control using scatterometry based metrology
SPIE - The International Society of Optical Engineering |
Electrochemical Society |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |
12
国際会議録
Depth profile characterization of hydrogen implanted silicon using spectroscopic ellipsometry
SPIE-The International Society for Optical Engineering |