High-brightness GaInAs/(Al)GaAs quantum dot tapered lasers at 980 nm with a high wavelength stability
- 著者名:
Auzanneau, S.-C. ( Thales Research and Technology (France) ) Calligaro, M. ( Thales Research and Technology (France) ) Krakowski, M. ( Thales Research and Technology (France) ) Deubert, S. ( Bayerische Julius-Maximilians-Univ. Wuerzburg (Germany) ) Reithmaier, J.P. ( Bayerische Julius-Maximilians-Univ. Wuerzburg (Germany) ) Forchel, A. ( Technische Physik Univ. Wuerzburg (Germany) ) - 掲載資料名:
- Novel In-Plane Semiconductor Lasers III
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 5365
- 発行年:
- 2004
- 開始ページ:
- 60
- 終了ページ:
- 71
- 総ページ数:
- 12
- 出版情報:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819452733 [0819452734]
- 言語:
- 英語
- 請求記号:
- P63600/5365
- 資料種別:
- 国際会議録
類似資料:
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |
Society of Photo-optical Instrumentation Engineers |
SPIE-The International Society for Optical Engineering |
10
国際会議録
High-brightness tapered laser diode bars and optical modules with Al-free active region (λ=980 nm)
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |