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Low-threshold, high-T0 and high-efficiency 1300nm and 1500nm lasers with AlInGaAs active region grown by MOCVD

著者名:
Tandon, A. ( Agilent Technologies (USA) )
Bour, D.P. ( Agilent Technologies (USA) )
Chang, Y.L. ( Agilent Technologies (USA) )
Lin, C.K. ( Agilent Technologies (USA) )
Corzine, S.W. ( Agilent Technologies (USA) )
Tan, M.R. ( Agilent Technologies (USA) )
さらに 1 件
掲載資料名:
Physics and Simulation of Optoelectronic Devices XII
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
5349
発行年:
2004
開始ページ:
206
終了ページ:
217
総ページ数:
12
出版情報:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819452573 [0819452572]
言語:
英語
請求記号:
P63600/5349
資料種別:
国際会議録

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