Influence of Gravity on Defect Formation in Homoepitaxial Layers of SiC Grown by Sublimation

Influence of Gravity on Defect Formation in Homoepitaxial Layers of SiC Grown by Sublimation

著者名:

Yakimova, R. ( Linkoeping University, )
Syvaejaervi, M. ( Linkoeping University, )
Janzen, E. ( Linkoeping University, )
Dedulle, J.-M. ( LMGP, UMR 5628 (CNRS/INPG) Grenoble; Iris Technologies; )
Pons, M. ( Institut National Polytechnique de Grenoble )

掲載資料名:

Proceedings, first International Symposium on Microgravity Research & Applications in Physical Sciences and Biotechnology, 10-15 September 2000, Sorrento, Italy

シリーズ名:

ESA SP

シリーズ巻号:

454

発行年:

2001

開始ページ:

381

終了ページ:

388

総ページ数:

8

出版情報:

Noordwijk, The Netherlands: ESA Publications Division

ISSN:

03796566

ISBN:

9789290926573 [9290926570]

言語:

英語

請求記号:

E11690/454-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013460
シリーズID:	PA00000009
会議名:	International Symposium on Microgravity Research & Applications in Physical Sciences and Biotechnology
回次:	1st
会議開催地:	Sorrento, Italy
会議開催年:	2000.09.10-2000.09.15

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